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清华大学 精密仪器系 导航工程中心, 北京 100084
收稿日期:2016-01-10,
修回日期:2016-02-17,
纸质出版日期:2016-06-25
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刘燕锋, 陈志勇, 张嵘. 微机械应力测试结构的温度特性和应力抑制方法[J]. 光学精密工程, 2016,24(6): 1345-1351
LIU Yan-feng, CHEN Zhi-yong, ZHANG Rong. Temperature characteristics of MEMS stress-testing structure and a stress-suppressing method[J]. Editorial Office of Optics and Precision Engineering, 2016,24(6): 1345-1351
刘燕锋, 陈志勇, 张嵘. 微机械应力测试结构的温度特性和应力抑制方法[J]. 光学精密工程, 2016,24(6): 1345-1351 DOI: 10.3788/OPE.20162406.1345.
LIU Yan-feng, CHEN Zhi-yong, ZHANG Rong. Temperature characteristics of MEMS stress-testing structure and a stress-suppressing method[J]. Editorial Office of Optics and Precision Engineering, 2016,24(6): 1345-1351 DOI: 10.3788/OPE.20162406.1345.
研究了典型微机械应力测试结构的温度特性及从源头上抑制热应力的方法。设计了一种可以代表微机械系统(MEMS)器件温度特性的应力测试结构,并分析了温度对其固有频率的影响机理。指出了与材料弹性模量、结构尺寸变化相比,轴向应力是影响该结构固有频率温度稳定性的主要因素,同时设计了一种可以释放热应力以及加工残余应力的应力隔离结构。考虑硅的线膨胀系数随温度变化的特性,通过建模仿真和实验测试获得了应力测试结构、应力隔离结构的轴向应力以及固有频率的温度特性。结果表明:在-50 ℃~+85 ℃,应力隔离结构将轴向热应力抑制到了应力测试结构的2个数量级以下,固有频率-温度系数由5.0×10
-3
ppm/℃左右降到了5.0×10
-5
ppm/℃以下。结果显示:设计的应力隔离结构具有非常良好的应力隔离效果,从源头上抑制了主要的温度影响因素引入整个微机械系统,可以应用于其它MEMS结构以获得良好的温度稳定性。
The temperature characteristics of typical stress-testing microstructures were studied
and a stress-suppressing method was proposed. A stress-testing structure to represent the temperature characteristics of MEMS (Micro-electro-mechanical Systems) devices was designed and the influence mechanism of temperature on its nature frequency was analyzed. It points out that the axial thermal stress is the main factor affecting temperature stability of the nature frequency as compared with the material elastic modulus and the changes of structure size. Meanwhile
a stress-suppressing structure was designed to release the thermal stress and the machining residual stress. As the linear expansion coefficient of silicon was affected by temperature
the temperature characteristics of the axial stress and nature frequency for the stress-testing structure and stress-suppressing structure were studied by simulations and experiences. The results indicate that the axial thermal stress in stress-suppressing structure is suppressed to below two orders of that in stress-testing structure
and the frequency-temperature coefficient is reduced from about 5.0×10
-3
ppm/℃ to below 5.0×10
-5
ppm/℃ at -50 ℃ -+85 ℃. It concludes that the stress-suppressing structure suppresses the stress effectively
and suppresses the temperature influence factors into the MEMS system at the source. Moreover
the stress-suppressing structure can be used for other MEMS systems and can offer good temperature stability.
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