偏置磁场对磁致伸缩液位传感器检测电压的影响

孙英; 边天元; 王硕; 翁玲; 张露予

doi:10.3788/OPE.20162411.2783

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偏置磁场对磁致伸缩液位传感器检测电压的影响

微纳技术与精密机械 | 更新时间：2020-07-07

- 偏置磁场对磁致伸缩液位传感器检测电压的影响
- Influence of bias magnetic field on detection voltage of magnetostrictive liquid level sensor
- 光学精密工程;Editorial Office of Optics and Precision Engineeri 2016年24卷第11期页码：2783-2791
- 作者机构：
  
  河北工业大学电磁场与电器可靠性省部共建重点实验室, 天津 300130
- 作者简介：
  
  孙英(1970-),女,河北唐山人,博士,副教授,硕士生导师,1994年、2001年、2008年于河北工学院分别获得学士、硕士、博士学位,主要从事磁器件设计、建模及控制等研究. E-mail:sunying@hebut.edu.cn. E-mail:sunying@hebut.edu.cn.
  [ "边天元(1990-),男,河北唐山人,硕士研究生,2014年于太原科技大学获得学士学位,主要从事磁器件设计及其检测技术等研究。E-mail:1125339175@qq.com" ]
- 基金信息：
  
  国家自然科学基金资助项目(No.51201055);河北省高等学校科学技术研究重点资助项目(No.ZD2015085);天津市高等学校科技发展基金资助项目(No.20140421);河北省引进留学人员资助项目(No.CG2013003001)
- DOI：10.3788/OPE.20162411.2783
  中图分类号： TP212.12
- 收稿日期：2016-05-20，
  
  录用日期：2016-7-10，
  
  纸质出版日期：2016-11-25
- 稿件说明：
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孙英, 边天元, 王硕, 等. 偏置磁场对磁致伸缩液位传感器检测电压的影响[J]. 光学精密工程;Editorial Office of Optics and Precision Engineeri, 2016,24(11):2783-2791.

Ying SUN, Tian-yuan BIAN, Shuo WANG, et al. Influence of bias magnetic field on detection voltage of magnetostrictive liquid level sensor[J]. Optics and precision engineering, 2016, 24(11): 2783-2791.
孙英, 边天元, 王硕, 等. 偏置磁场对磁致伸缩液位传感器检测电压的影响[J]. 光学精密工程;Editorial Office of Optics and Precision Engineeri, 2016,24(11):2783-2791. DOI： 10.3788/OPE.20162411.2783.

Ying SUN, Tian-yuan BIAN, Shuo WANG, et al. Influence of bias magnetic field on detection voltage of magnetostrictive liquid level sensor[J]. Optics and precision engineering, 2016, 24(11): 2783-2791. DOI： 10.3788/OPE.20162411.2783.

摘要

为了提高磁致伸缩液位传感器的检测精度，研究了磁致伸缩液位传感器中产生偏置磁场的浮子磁铁的放置方式及其对检测电压的影响。利用ANSYS软件对浮子磁铁不同放置方式下形成的偏置磁场进行了有限元分析，分析显示：采用3块磁铁互成120°N极N极S极（NNS）放置或者采用圆环磁铁作为偏置磁场时检测效果比较理想。实验研究了磁致伸缩液位传感器的偏置磁场对检测电压的影响，并在浮子磁铁不同放置方式下进行多次实验。结果表明：偏置磁铁为3块磁铁互成120°NNS放置时或者为圆环磁铁时，检测电压的幅值达到50 mV，比其它放置方式提高了近30 mV。研究表明：磁致伸缩液位传感器应选择3块磁铁NNS放置或者选择圆环磁铁作为偏置磁场。

Abstract

To improve the detection accuracy of a magnetostrictive liquid level sensor

different placements of float magnets in the bias magnetic fields of the sensor and its impact on the detection voltage were researched. The bias magnetic fields generated by float magnets in different placements were analyzed by the finite element analysis of ANSYS software. It was found that when three pieces of magnets under NNS placement or one single ring magnet are chosen as bias magnetic field

the detection voltage waveform is in line with expectations. Besides

the effects of bias magnetic field of magnetostrictive liquid level sensor were done on detection voltage were experimentally studied and the experiments were done more times for the float magnets at different placements. The experiment results verify that when the bias magnetic field is generated by three pieces of magnets under NNS placement or one single ring magnet

the amplitude of detection voltage reaches 50 mV

which has improved almost 30 mV as compared with that of other ways. It suggests that three pieces of magnets under NNS placement or one single ring magnet can be applied as the bias magnetic field of magnetostrictive liquid level sensors.

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Keywords

references

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