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西北核技术研究所 激光与物质相互作用国家重点实验室,陕西 西安,710024
收稿日期:2016-05-10,
修回日期:2016-06-03,
纸质出版日期:2016-11-14
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徐作冬, 张检民, 林新伟等. 强脉冲激光作用下碲镉汞光伏探测器的反常行为[J]. 光学精密工程, 2016,24(10s): 50-56
XU Zuo-dong, ZHANG Jian-min, LIN Xin-wei etc. Abnormal behaviors of photovoltaic HgCdTe detectors under intense pulse laser[J]. Editorial Office of Optics and Precision Engineering, 2016,24(10s): 50-56
徐作冬, 张检民, 林新伟等. 强脉冲激光作用下碲镉汞光伏探测器的反常行为[J]. 光学精密工程, 2016,24(10s): 50-56 DOI: 10.3788/OPE.20162413.0050.
XU Zuo-dong, ZHANG Jian-min, LIN Xin-wei etc. Abnormal behaviors of photovoltaic HgCdTe detectors under intense pulse laser[J]. Editorial Office of Optics and Precision Engineering, 2016,24(10s): 50-56 DOI: 10.3788/OPE.20162413.0050.
为了研究强脉冲激光辐照下光伏型探测器的响应行为,利用室温下零偏压工作的短波红外光伏型碲镉汞单元探测器开展了实验研究。使用调制频率为1 000 Hz的2.0
m光纤激光作为探测器正常工作时探测的信号光,以不同能量的2
m波段脉冲激光作用于工作状态的探测器。实验结果显示,当入射到探测器光敏面的脉冲激光能量密度达到0.1 J/cm
2
量级时,在脉冲激光辐照结束后的短时间内,探测器对信号光的响应幅值出现暂时的降低,降低程度与激光强度正相关,最高可达100%:这种现象被称作信号压制效应;同时,探测器响应波形的基线从零降低为负值,基线降低幅度与激光强度正相关,随后探测器对信号光的响应幅值以及响应波形的基线在10~100 ms量级的时间内逐渐恢复到辐照前水平,这种现象被称作负基线现象。理论分析和实验测量表明,信号压制效应是由于脉冲激光引起的光敏区域温度升高所导致;而负基线现象与探测器结构和热效应相关,具体产生机理则有待进一步研究。
The response behavior of photovoltaic detector under the laser irradiation with high-fluence pulse was researched experimentally
by using a short-wave infrared photovoltaic HgCdTe single-element detector with zero bias voltage under room temperature. Taking a 2.0
m fiber laser with modulation frequency of 1000 Hz as the signal light in normal working state
the detector was interacted with 2
m wave-band pulsed laser of different energies. Experimental results indicate that when the pulsed laser energy density on the photosensitive surface of detector reaches 0.1 J/cm
2
detector has two abnormal response behaviors named after signal suppression and negative baseline respectively. In the short time after pulsed laser irradiation ends
response amplitude to signal light decreases temporarily and the decrease degree with the maximum value of 100% is positively related to laser intensity. At the same time
the base line of detector response waveform decreases from zero to negative value and the decrease amplitude is positively related to laser intensity. Then
the response amplitude of detector to signal light and baseline of response waveform gradually recover to the level before irradiation within 10 ms to 100 ms. The signal suppression effect is caused by the temperature increase in photosensitive area
and the negtive baseline is correlated with thermal effect and structure of the detector.
王思雯,郭立红,赵帅,等. 高功率CO2激光对远场HgCdTe探测器的干扰实验[J]. 光学精密工程,2010,18(3):798-804. WANG S W, GUO L H, ZHAO SH,et al.. Experiments of high-power CO2 laser disturbance to far-field HgCdTe detectors[J]. Opt. Precision Eng., 2010, 18(3):798-804. (in Chinese)
邱伟成,王睿,许中杰,等. PV型HgCdTe线阵探测器的光学串扰[J]. 强激光与粒子束, 2012,24(10):2325-2330. QIU W CH, WANG R, XU ZH J,et al.. Optical crosstalk of HgCdTe PV linear array detector[J]. High Power Laser & Particle Beams, 2012, 24(10):2325-2330. (in Chinese)
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江厚满,程湘爱. 描述光伏效应的新解析模型[J]. 强激光与粒子束, 2002,14(2):177-180. JIANG H M, CHENG X A. New analytic model describing photovoltaic effect[J]. High Power Laser & Particle Beams, 2002, 14(2):177-180. (in Chinese)
程湘爱,陆启生,马丽芹,等. 1.319 μm连续波激光辐照PV型HgCdTe探测器的实验研究[J]. 光学学报,2003,23(5):622-626. CHENG X A,LU Q SH, MA L Q, et al.. Experimental study of HgCdTe(PV) detector irradiated by CW 1.319 μm laser[J]. Acta Optica Sinica, 2003,23(5):622-626. (in Chinese)
马丽芹,陆启生,鞠博. 光伏型光电探测器的激光软损伤机制[J]. 强激光与粒子束, 2006,18(6):917-921. MA L Q, LU Q SH, JU B. Mechanism of soft-damage in photovoltaic detectors under laser irradiation[J]. High Power Laser & Particle Beams, 2006, 18(6):917-921. (in Chinese)
江天,程湘爱,郑鑫,等. 光伏碲镉汞探测器在波段内连续激光辐照下的非线性响应机理研究[J]. 物理学报, 2012,61(13):137302. JIANG T, CHENG X A, ZHENG X, et al.. Investigation of the nonlinear response mechanism of photovoltaic HgCdTe detector irradiated by CW band-in laser[J]. Acta Phys. Sin., 2012,61(13):137302. (in Chinese)
江天,程湘爱,许中杰,等. 光伏型碲镉汞探测器在波段内连续激光辐照下的两种不同过饱和现象的产生机理[J]. 物理学报, 2013,62(9):097303-1-10. JIANG T, CHENG X A, XU ZH J, et al.. Generation mechanism of two different over-saturation phenomena of photovoltaic HgCdTe detectors irradiated by CW band-in laser[J]. Acta Phys. Sin., 2013,62(9):097303-1-10. (in Chinese)
ALLEN R, ESTEROWITZ L, KRUER M, et al.. Experimental study of laser induced temporary degradation in photovoltaic PbSnTe and HgCdTe diodes[J]. Infrared Physics, 1975, 15(4):265-269.
罗福,江继军,孙承纬. 硅光电二极管激光损伤阈值随激光脉宽的变化[J]. 强激光与粒子束, 2004,16(6):685-688. LF, JIANG J J, SUN CH W. Variation in damage thresholds of Si photodiodes with laser pulse duration[J]. High Power Laser & Particle Beams, 2004, 16(6):685-688. (in Chinese)
豆贤安,孙晓泉,汪作来. 飞秒激光诱发硅PIN光电二极管饱和特性的实验研究[J]. 量子电子学报,2012,29(6):671-676. DOU X A, SUN X Q, WANG Z L. Experimental research on saturation characteristic of silicon p-i-n photodiode induced by femtosecond laser[J]. Chinese Journal of Quantum Electronics, 2012, 29(6):671-676. (in Chinese)
胡伟,豆贤安,孙晓泉. 强光照射下的InGaAs二极管内部光生载流子分析[J]. 光子学报, 2014, 43(6):0625001. HU W, DOU X A, SUN X Q. The analysis of the photo-carriers of the InGaAs p-i-n photodiode response to the high optical injection[J]. Acta Photonica Sinica, 2014, 43(6):0625001. (in Chinese)
崔昊杨,李志锋,马法君,等. 皮秒脉冲激光照射下碲镉汞光伏红外探测器的负光伏响应新现象[J]. 红外与毫米波学报, 2009,28(3):161-164. CUI H Y, LI ZH F, MA F J, et al.. Negative photovoltaic-response in HgCdTe infrared photovoltaic detectors irradiated with picosecond pulsed laser[J]. Journal of Infrared Millim. Waves, 2009, 28(3):161-164.(in Chinese)
CUI H Y, ZENG J D, YANG J J, et al.. Dependence of transient photovoltage characteristics on bias light intensity for HgCdTe-based photovoltaic infrared detector pixel arrays[J]. Opt.Quant.Electron., 2014, 46:1359-1364.
胡伟,孙晓泉,豆贤安. 锁模激光照射下InGaAs p-i-n管的负电压响应机理[J]. 红外与毫米波学报,2015,34(1):36-40. HU W, SUN X Q, DOU X A. Analysis of negative voltage-response in the InGaAs p-i-n photodiode under mode-locked laser illumination[J]. Journal of Infrared Millim. Waves, 2015,34(1):36-40. (in Chinese)
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