脉冲激光辐照所致线阵碲镉汞焦平面器件信号的整体跃变现象

张检民; 徐作冬; 冯国斌; 林新伟; 李辉; 张震; 赵军

doi:10.3788/OPE.20162413.0272

您当前的位置：

首页 >

文章列表页 >

脉冲激光辐照所致线阵碲镉汞焦平面器件信号的整体跃变现象

更新时间：2020-08-13

- 脉冲激光辐照所致线阵碲镉汞焦平面器件信号的整体跃变现象
- Overall signal transition of linear HgCdTe focal plane array device induced by pulsed laser
- 光学精密工程 2016年24卷第10s期页码：272-279
- 作者机构：
  
  1. 西北核技术研究所激光与物质相互作用国家重点实验室,陕西西安,710024
  2. 中国科学院上海技术物理研究所上海,200083
- 作者简介：
- 基金信息：
  
  西北核技术研究所长线预研基金资助项目（No.12111502）();激光与物质相互作用国家重点实验室基金资助项目（No.SKLLIM1503）()
- DOI：10.3788/OPE.20162413.0272
  中图分类号： TN215;TN249
- 收稿日期：2016-05-18，
  
  修回日期：2016-06-12，
  
  纸质出版日期：2016-11-14
- 稿件说明：
移动端阅览
张检民, 徐作冬, 冯国斌等. 脉冲激光辐照所致线阵碲镉汞焦平面器件信号的整体跃变现象[J]. 光学精密工程, 2016,24(10s): 272-279

ZHANG Jian-min, XU Zuo-dong, FENG Guo-bin etc. Overall signal transition of linear HgCdTe focal plane array device induced by pulsed laser[J]. Editorial Office of Optics and Precision Engineering, 2016,24(10s): 272-279
张检民, 徐作冬, 冯国斌等. 脉冲激光辐照所致线阵碲镉汞焦平面器件信号的整体跃变现象[J]. 光学精密工程, 2016,24(10s): 272-279 DOI： 10.3788/OPE.20162413.0272.

ZHANG Jian-min, XU Zuo-dong, FENG Guo-bin etc. Overall signal transition of linear HgCdTe focal plane array device induced by pulsed laser[J]. Editorial Office of Optics and Precision Engineering, 2016,24(10s): 272-279 DOI： 10.3788/OPE.20162413.0272.

摘要

为研究带有电容反馈跨阻放大器（CTIA）读出电路的线阵碲镉汞焦平面阵列器件在强脉冲激光作用下的响应特性，使用100 ns脉宽的2

m波段红外激光开展了单脉冲辐照效应实验，发现了脉冲激光诱导的焦平面阵列输出信号整体跃变现象，即较强脉冲光辐照后，线阵器件中所有像素的输出信号出现幅度近似一致的上升。对信号跃变实验规律进行了分析，结果表明，信号整体跃变出现阈值约为1

J/cm

，信号跃变量随辐照光强单调上升，但在100

J/cm

左右呈现饱和趋势。对该现象的产生机理进行了分析，排除了光学串扰、电学串扰、热累积效应等因素的影响，得出信号跃变的主要原因在于：强光作用后，供电电路上的耦合电容因为快速放电而出现瞬时压降，导致通过公共P端电极连接的光敏二极管工作状态由零偏转变为反偏。

Abstract

In order to investigate the response characteristics of linear HgCdTe focal plane device with Capacitive Feedback Transimpedance Amplifier (CTIA) readout circuit under intense laser irradiation

single shot irradiating experiments were performed by using a 2

m waveband pulsed infrared laser with a pulse duration of about 100 ns. The pulsed laser induces a new phenomenon of overall signal transition

in which the output signals of all pixels of the linear device have an approximately same increment after irradiated by a relatively intense laser pulse. The rules of the overall signal transition were summarized and it demonstrates that the overall transition occurs at a laser intensity of approximately 1

J/cm

and get saturated at about 100

J/cm

during this period

the transition increases with the increase of the irradiation intensity. Influence factors such as optical crosstalk

electric crosstalk

and thermal accumulation were analyzed and excluded. Further investigation indicates that the overall signal transition is primarily attribute to the voltage drop of the couple capacitor caused by rapid discharge during intense laser irradiating in the power supply circuit

thus resulting in a transformation of operational state of all the photosensitive diodes from zero-bias to reverse-bias

which are connected by a common P-region electrode on surface of the chip.

关键词

Keywords

references

ROGALSKI Antonio. Infrared detectors[M]. 2nd. New York:CRC Press, 2010.

褚君浩. 窄禁带半导体物理学[M]. 北京:科学出版社, 2005. CHU J H.Narrow Bandgap Semiconductor Physics[M]. Beijing:Science Press, 2005. (in Chinese)

BARTOLI F, ESTEROWITZ L, KRUER M, et al.. Thermal modeling of laser damage in HgCdTe photoconductive and PbSnTe photovoltaic detectors[J]. J. Appl. Phys., 1975,46(10):4519-4525.

许晓军, 曾交龙, 陆启生, 等. 1.06 μm激光对PC型HgCdTe探测器的破坏阈值研究[J]. 强激光与粒子束, 1998,10(4):552-556. XU X J, CENG J L, LU Q SH,et al.. Research of Damage Thresholds of PC type HgCdTe Detector under CW YAG Laser[J]. High Power Laser & Particle Beams, 1998,10(4):552-556. (in Chinese)

王思雯, 郭立红, 赵帅, 等. 高功率CO2激光对远场HgCdTe探测器的干扰实验[J]. 光学精密工程, 2010,18(4):798-804. WANG S W, GUO L H, ZHAO SH, et al.. Experiments of high-power CO2 laser disturbance to far-field HgCdTe detectors[J]. Opt. Precision Eng., 2010,18(4):798-804. (in Chinese)

汤伟, 吉桐柏, 郭劲, 等. 高重频CO2激光损伤HgCdTe晶体的数值分析[J]. 中国光学, 2013,6(5):736-742. TANG W, JI T B, GUO J, et al.. Numerical analysis of HgCdTe crystal damaged by high repetition frequency CO2 laser[J]. Chinese Optics, 2013,6(5):736-742. (in Chinese)

张检民, 冯国斌, 杨鹏翎, 等. 碲镉汞光导探测器在中红外激光测量中的热问题[J]. 光学精密工程, 2015,23(1):22-30. ZHANG J M, FENG G B, YANG P L,et al.. Thermal issues of photoconductive HgCdTe detector in mid-infrared laser parameter measurement[J]. Opt. Precision Eng., 2015,23(1):22-30. (in Chinese)

DIMMELER A, EBERLE B,VAN D H J C, et al.. Laser dazzling of focal plane array cameras[C]. 2007 Photoics in Security and Defence. Internatimal society for Optics and Photonics, 2007:673800-673800-10.

DURÉCU A, BOURDON P, FLEURY D, et al.. Infrared laser irradiation breadboard:dazzling sensitivity analysis of a HgCdTe focal plane array[J].SPIE,1999,59(2):1658-1661.

郝向南, 聂劲松, 李化, 等. 10.6 μm激光对HgCdTe焦平面器件热应力的分析[J]. 激光与红外, 2012(7):790-794. HAO X N, NIE J S, LI H,et al.. Theoretical analysis of thermal-stress effect of HgCdTe infrared focal place device induced by 10.6 μm laser[J]. Laser & Infrared, 2012(7):790-794. (in Chinese)

雷鹏, 李化, 卞进田, 等. TEA-CO2激光辐照HgCdTe图像传感器的实验研究[J]. 光学学报, 2013,33(2):119-123. LEI P, LI H, BIAN J T,et al. Experimental study of HgCdTe imaging sensor irradiated by TEA-CO2 laser[J]. Acta Optica Sinica, 2013,33(2):119-123. (in Chinese)

王毕艺, 官上洪, 赵万利, 等. 红外焦平面器件对不同波长激光辐照的响应特性研究[J]. 红外, 2014,35(1):9-13. WANG B Y, GUAN SH H, ZHAO W L,et al.. Study of response characteristics of infrared focal plane device to irradiation of different wavelength lasers[J]. 2014,35(1):9-13. (in Chinese)

刘璞. 飞秒激光对光伏型256×1线阵碲镉汞探测器的辐照效应研究[D]. 长沙:国防科学技术大学, 2008. LIU P. Study of Irradiation Effect to PV HgCdTe Linear Array Detector by fs Laser[D]. Changsha:National University of Defense Technology, 2008. (in Chinese)

邱伟成. 线阵光伏型碲镉汞探测器激光辐照效应若干问题研究[D]. 长沙:国防科学技术大学, 2012. QIU W CH. Research on the Irradiation Effects of PV-HgCdTe Linear Array Detector under Laser [D]. Changsha:National University of Defense Technology, 2012. (in Chinese)

邱伟成, 王睿, 江天, 等. PV型HgCdTe线阵探测器对强光反常响应机制研究[J]. 光学学报, 2012,32(10):14-20. QIU W CH,WANG R,JIANG T, et al.. Study of unusual response mechanism to PV HgCdTe linear array detector by hard light[J]. Acta Optica Sinica, 2012,32(10):14-20. (in Chinese)

QIU W CH, CHENG X A, WANG R, et al.. The transient analysis of latch-up in CMOS transmission gate induced by laser[J]. Microelectronics Reliability, 2014,54(12):2775-2781.

王忆锋, 马钰. 论红外焦平面器件的串音[J]. 红外, 2014,35(1):1-8. WANG Y F, MA Y. On the crosstalk of infrared focal plane array[J]. 2014,35(1):1-8. (in Chinese)

浏览量

841

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

强脉冲激光作用下碲镉汞光伏探测器的反常行为

激光辐照行间转移型CCD的串扰效应

曲轴轴承座/连杆激光加工裂解槽的组织与胀断性能

CO₂激光辐照氧化矾热像仪的实验

单晶硅片在脉冲激光作用下的断裂行为