离子束溅射氧化钽薄膜的光学带隙特性

刘华松; 杨霄; 王利栓; 姜玉刚; 季一勤; 陈德应

doi:10.3788/OPE.20172501.0021

您当前的位置：

首页 >

文章列表页 >

离子束溅射氧化钽薄膜的光学带隙特性

现代应用光学 | 更新时间：2020-07-07

- 离子束溅射氧化钽薄膜的光学带隙特性
- Characteristics of optical band gap of tantalum oxide thin film deposited by ion beam sputtering
- 光学精密工程 2017年25卷第1期页码：21-27
- 作者机构：
  
  1.中国航天科工飞航技术研究院天津津航技术物理研究所天津市薄膜光学重点实验室, 天津 300308
  2.哈尔滨工业大学光电子技术研究所可调谐激光技术国防科技重点实验室, 黑龙江哈尔滨 150001
- 作者简介：
  
  刘华松(1980-),男,辽宁阜新人,博士,研究员,主要从事高性能与特种光学薄膜的设计、制备与表征、固体光学薄膜材料等方面的研究。E-mail:liuhuasong@hotmail.com E-mail:liuhuasong@hotmail.com
- 基金信息：
  
  国家自然科学基金资助项目(No.61405145，No.61235011);天津市自然科学重点基金资助项目(No.15JCZDJC31900);中国博士后科学基金资助项目(No.2015T80115，No.2014M560104)
- DOI：10.3788/OPE.20172501.0021
  中图分类号： O484.4
- 收稿日期：2016-08-30，
  
  录用日期：2016-9-14，
  
  纸质出版日期：2017-01-25
- 稿件说明：
移动端阅览
刘华松, 杨霄, 王利栓, 等. 离子束溅射氧化钽薄膜的光学带隙特性[J]. 光学精密工程, 2017,25(1):21-27.

Hua-song LIU, Xiao YANG, Li-shuan WANG, et al. Characteristics of optical band gap of tantalum oxide thin film deposited by ion beam sputtering[J]. Editorial office of optics and precision engineeri, 2017, 25(1): 21-27.
刘华松, 杨霄, 王利栓, 等. 离子束溅射氧化钽薄膜的光学带隙特性[J]. 光学精密工程, 2017,25(1):21-27. DOI： 10.3788/OPE.20172501.0021.

Hua-song LIU, Xiao YANG, Li-shuan WANG, et al. Characteristics of optical band gap of tantalum oxide thin film deposited by ion beam sputtering[J]. Editorial office of optics and precision engineeri, 2017, 25(1): 21-27. DOI： 10.3788/OPE.20172501.0021.

摘要

薄膜是可见光到近红外波段中重要的高折射率薄膜材料之一。本文针对离子束溅射制备Ta

薄膜的光学带隙特性开展了实验研究工作，基于Cody-Lorentz模型表征了薄膜的光学带隙特性，重点针对薄膜的禁带宽度和Urbach带尾宽度与制备参数之间的相关性进行研究。研究结果表明：在置信概率95%以上时，对Ta

薄膜禁带宽度影响的制备参数，权重大小依次为氧气流量、基板温度、离子束电压；而对Ta

薄膜Urbach带尾宽度影响的制备参数，权重大小依次为基板温度和氧气流量。对于Ta

薄膜在超低损耗激光薄膜和高损伤阈值激光薄膜领域内应用，本文的研究结果给出了同步提高薄膜的禁带宽度和降低带尾宽度的重要工艺参数选择方法。

Abstract

The Ta

thin film is one of the most important high refractive materials in the range from visible to near infrared. This paper researched the optical band gap of the Ta

thin film which was deposited by the Ion Beam Sputtering (IBS). The optical band gap was characterized by the Cody-Lorentz dispersion model. Particularly

the correlations of the band gap and the Urbach with technological parameters were studied respectively. The results show that when the confidence probability is over 95%

the technological parameters are ranked due to their influence coefficients on the band gap as follows: oxygen flow

substrate temperature

and ion beam voltage. Accordingly due to those on the Urbach

the technological parameters are ranked as substrate temperature and oxygen flow. The result provides a method for choosing the key technological parameters to increase the band gap width and reduce the Urbach energy width simultaneously of the Ta

thin film used in the areas of the ultra-low loss thin film and high laser-induced damage threshold thin film.

关键词

Keywords

references

FLORY F. Comparison of different technologies for high quality optical coatings[J]. SPIE, 1990, 1270:172-183.

HERRMANN JR W C. E-beam deposition characteristics of reactively evaporated Ta 2 O 5 for optical interference coatings[J]. Journal of Vacuum Science and Technology, 1981, 18(3):1303-1305.

SCHILLER S, HEISIG U, STEINFELDER K, et al.. Reactive DC sputtering with the magnetron-plasmatron for tantalum pentoxide and titanium dioxide films[J].Thin Solid Films, 1979, 63(2):369-375.

MARTIN P J, MACLEOD H A, NETTERFIELD R P, et al.. Ion-beam-assisted deposition of thin films[J]. Applied Optics, 1983, 22(1):178-184.

DEMIRYONT H, SITES J R, GEIB K. Effects of oxygen content on the optical properties of tantalum oxide films deposited by ion-beam sputtering[J].Applied Optics, 1985, 24(4):490-495.

YOON S G, KIM Y T, KIM H K, et al.. Comparison of residual stress and optical properties in Ta 2 O 5 thin films deposited by single and dual ion beam sputtering[J]. Materials Science and Engineering:B, 2005, 118(1-3):234-237.

YOON S G, KIM H K, KIM M J, et al.. Effect of substrate temperature on surface roughness and optical properties of Ta 2 O 5 using ion-beam sputtering[J]. Thin Solid Films, 2005, 475(1):239-242.

HUANG A P, CHU P K. Characteristics of interface between Ta 2 O 5 thin film and Si (100) substrate[J]. Surface and Coatings Technology, 2005, 200(5-6):1714-1718.

CHENG W H, CHI S F, CHU A K. Effect of thermal stresses on temperature dependence of refractive index for Ta 2 O 5 dielectric films[J]. Thin Solid Films, 1999, 347(1-2):233-237.

LIU W J, CHIEN C H. Influences of residual argon gas and thermal annealing on Ta 2 O 5 thin films[J]. Japanese Journal of Applied Physics, 2005, 44(1R):181.

UTHANNA S, CHANDRA S V J, REDDY P S, et al.. Effect of post-deposition annealing on the structural, electrical, and optical properties of DC magnetron sputtered Ta 2 O 5 films[J]. J. Phys.:Conf. Ser., 2008, 114(1):012035.

数学手册[M]. 北京:高等教育出版社,1979:853-858.

Handbook of Mathematics[M]. Beijing:Higher Education Press, 1979:853-858.(in Chinese)

FERLAUTO A S, FERREIRA G M, PEARCE J M, et al.. Analytical model for the optical functions of amorphous semiconductors from the near infrared to ultraviolet:Applications in thin film photovoltaics[J]. Journal of Applied Physics, 2002, 92(5):2424-2436.

刘华松, 季一勤, 张锋, 等. 金属氧化物薄膜在中波红外光谱区内光学常数色散特性[J]. 光学学报, 2014, 34(8):0831003.

LIU H S, JI Y Q, ZHANG F, et al.. Dispersive properties of optical constants of some metallic oxide thin films in the mid-infrared regions[J]. Acta Optica Sinica, 2014, 34(8):0831003.(in Chinese)

何少华, 文竹青, 娄涛. 试验设计与数据处理[M]. 长沙:国防科技大学出版社,2002:62-92.

HE SH H, WEN ZH Q, LOU T. Experiment and Data Handle[M]. Changsha:National University of Defence Technology Press, 2002:62-92.(in Chinese)

浏览量

973

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

基于等离激元热电子效应的光电晶体管制备及其特性