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基于薄膜退火的MoS2/SiO2/Si异质结太阳能电池光伏性能提高
Enhancement of photovoltaic performance of MoS2/SiO2/Si heterojunction solar cells by film annealing
- 光学 精密工程 2017年25卷第3期 页码：597-602
- 作者机构：
1.河北大学 物理科学与技术学院, 河北 保定 071002
2.华北理工大学 理学院, 河北 唐山 063009
- 作者简介：
[ "许贺菊 (1981-), 女, 河北秦皇岛人, 博士研究生, 讲师, 2007年于河北大学获得硕士学位, 主要从事光电功能材料与器件和医用物理教学的研究。E-mail: xuheju@126.com" ]
丛日东 (1986-), 男, 山东烟台人, 博士, 讲师, 2014年于吉林大学获得博士学位, 主要从事光电功能材料与器件的研究。E-mail:congrd@hbu.edu.cn CONG Ri-dong, E-mail:congrd@hbu.edu.cn
于威 (1965-), 男, 河北保定人, 教授, 博士生导师, 1992年、2002年于河北大学分别获得硕士、博士学位, 主要从事光电功能材料与器件的研究。E-mail:yuwei@hbu.edu.cn YU Wei, E-mail:yuwei@hbu.edu.cn
- 基金信息：国家自然科学基金青年基金资助项目(61504036);河北省自然科学基金青年基金资助项目(A2016201087);河北省高等学校科学研究指导项目(Z2015121);河北省科技计划资助项目(No.13214315);教育部博士点基金资助项目(No.20131301120003);河北省高等学校科技研究项目(No.QN20131115)
DOI：10.3788/OPE.20172503.0597
中图分类号： TM914.42;O475收稿日期：2016-10-13，
录用日期：2016-11-15，
纸质出版日期：2017-03-25
- 稿件说明：
移动端阅览
许贺菊, 张彬, 张瑜, 等. 基于薄膜退火的MoS2/SiO2/Si异质结太阳能电池光伏性能提高[J]. 光学 精密工程, 2017,25(3):597-602.
He-ju XU, Bin ZHANG, Yu ZHANG, et al. Enhancement of photovoltaic performance of MoS2/SiO2/Si heterojunction solar cells by film annealing[J]. Optics and precision engineering, 2017, 25(3): 597-602.
许贺菊, 张彬, 张瑜, 等. 基于薄膜退火的MoS2/SiO2/Si异质结太阳能电池光伏性能提高[J]. 光学 精密工程, 2017,25(3):597-602. DOI： 10.3788/OPE.20172503.0597.
He-ju XU, Bin ZHANG, Yu ZHANG, et al. Enhancement of photovoltaic performance of MoS2/SiO2/Si heterojunction solar cells by film annealing[J]. Optics and precision engineering, 2017, 25(3): 597-602. DOI： 10.3788/OPE.20172503.0597.
摘要
为了制备高效的MoSi/SiO
2
/Si异质结太阳能电池，利用磁控溅射技术制备MoS
2
薄膜，并在硫气氛下对MoS
2
薄膜进行退火处理。分别用退火和未退火的MoS
2
薄膜制备MoS
2
/SiO
2
/Si异质结太阳能电池，研究了退火对MoS
2
薄膜的微观结构和MoS
2
/SiO
2
/Si异质结太阳能电池光电性能的影响。实验结果显示，相比于未退火的，经过退火处理的MoS
2
薄膜的拉曼峰半高宽（FWHM）变窄，峰强增强，显微荧光光谱中也出现明显的激子发光峰。由此表明，退火处理使MoS
2
薄膜由非晶向晶态转变，薄膜的体缺陷减少，异质结太阳能电池的开路电压和填充因子得到提升，器件转换效率从0.94%提高到1.66%。不同光照强度下的
J
-
V
测量和暗态的
J
-
V
测量结果表明，经退火处理的MoS
2
薄膜的异质结太阳能电池具有较高的收集电压和更接近于1的理想因子，这归因于退火导致MoS
2
薄膜的体缺陷的减少，近而降低了MoS
2
/ SiO
2
/Si异质结太阳能电池器件的体缺陷复合。
Abstract
MoS
2
thin films were prepared using magnetron sputtering technology and annealed in sulfur surrounding. Then
MoS
2
/SiO
2
/Si heterojunction solar cells were fabricated with annealed and unannealed MoS
2
thin films respectively. The effects of annealing on the microstructure of MoS
2
thin films and the photovoltaic performance of MoS
2
/SiO
2
/Si heterojunction solar cells were investigated. Compared with the unannealed MoS
2
thin film
the full width at half maximum (FWHM) of Raman peaks of the annealed MoS
2
thin film becomes narrower
the peak intensities are stronger
and exciton peaks are emerged in microscopic PL spectrum. The results indicate that the MoS
2
films transformed from amorphous to crystalline by annealing and bulk defects in films were reduced
which can increase the open-circuit voltage and the fill factor as well as the conversion efficiency (from 0.94% to 1.66%) of the devices. The variable intensity
J
-
V
measurements and the dark
J
-
V
measurements demonstrate that the annealed MoS
2
/SiO
2
/Si heterojunction solar cells have higher collection voltage and ideality factor
n
nearly close to 1
which due to the decrease of the bulk defects density of the MoS
2
thin films as well as the decline of the defects recombination of the device leaded by annealing.
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Keywords
references
NOVOSELOV K S, GEIM A K, MOROZOY S V, et al.. Two-dimensional gas of massless dirac fermions in grapheme [J]. Nature, 2005, 438: 197-200. NOVOSELOV K S, GEIM A K, MOROZOY S V, et al.. Two-dimensional gas of massless dirac fermions in grapheme [J]. Nature, 2005, 438: 197-200.
徐昌一.石墨烯应用于GaN基材料的研究进展[J].发光学报, 2016, 37(7): 778-785. 徐昌一.石墨烯应用于GaN基材料的研究进展[J].发光学报, 2016, 37(7): 778-785.
XU CH Y. Graphene applied to GaN based materals [J]. Chin. J. Lumin., 2016, 37(7): 778-785.(in Chinese) XU CH Y. Graphene applied to GaN based materals [J]. Chin. J. Lumin., 2016, 37(7): 778-785.(in Chinese)
BERGER C, SONG Z M, LI X B, et al.. Electronic confinement and coherence in patterned epitaxial graphene [J]. Science, 2006, 312(5777): 1191-1196. BERGER C, SONG Z M, LI X B, et al.. Electronic confinement and coherence in patterned epitaxial graphene [J]. Science, 2006, 312(5777): 1191-1196.
巩哲, 何大伟, 王永生, 等.化学气相沉积法在蓝宝石衬底上可控生长大面积高质量单层二硫化钨[J].发光学报, 2016, 37(8): 984-989. 巩哲, 何大伟, 王永生, 等.化学气相沉积法在蓝宝石衬底上可控生长大面积高质量单层二硫化钨[J].发光学报, 2016, 37(8): 984-989.
GONG ZH, HE D W, WANG Y SH, et al.. Controllable synthesis of high quality monolayer WS 2 with large size on sapphire substrate by chemical vapor deposition[J]. Chin. J. Lumin., 2016, 37(8): 984-989.(in Chinese) GONG ZH, HE D W, WANG Y SH, et al.. Controllable synthesis of high quality monolayer WS 2 with large size on sapphire substrate by chemical vapor deposition[J]. Chin. J. Lumin., 2016, 37(8): 984-989.(in Chinese)
CHEN K, WAN X, WEN J X, et al.. Electronic properties of MoS 2 -WS 2 heterostructures synthesized with two-step lateral epitaxial strategy [J]. Acs Nano, 2015, 9(10): 9868-9876. CHEN K, WAN X, WEN J X, et al.. Electronic properties of MoS 2 -WS 2 heterostructures synthesized with two-step lateral epitaxial strategy [J]. Acs Nano, 2015, 9(10): 9868-9876.
WANG Q H, KALANTAR-ZADEH K, KIS A, et al.. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides [J]. Nat. Nanotechnol., 2012, 7(11): 699-712. WANG Q H, KALANTAR-ZADEH K, KIS A, et al.. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides [J]. Nat. Nanotechnol., 2012, 7(11): 699-712.
WANG H, YU L L, LEE Y H, et al.. Integrated circuits based on bilayer MoS 2 transistors [J]. Nano Lett., 2012, 12(9): 4674-4680. WANG H, YU L L, LEE Y H, et al.. Integrated circuits based on bilayer MoS 2 transistors [J]. Nano Lett., 2012, 12(9): 4674-4680.
HAO L Z, LIU Y J, GAO W, et al.. Electrical and photovoltaic characteristics of MoS 2 /Si p-n junctions [J]. J. Appl. Phys., 2015, 117(11): 114502. HAO L Z, LIU Y J, GAO W, et al.. Electrical and photovoltaic characteristics of MoS 2 /Si p-n junctions [J]. J. Appl. Phys., 2015, 117(11): 114502.
BERNARDI M, PALUMMO M, GROSSMAN J C. Extraordinary sunlight absorption and one nanometer thick photovoltaics using two-dimensional monolayer materials [J]. Nano Lett., 2013, 13(8): 3664-3670. BERNARDI M, PALUMMO M, GROSSMAN J C. Extraordinary sunlight absorption and one nanometer thick photovoltaics using two-dimensional monolayer materials [J]. Nano Lett., 2013, 13(8): 3664-3670.
PRADHAN S K, XIAO B, PRADHAN A K. Enhanced photo-response in p-Si/MoS 2 heterojunction-based solar cells [J]. Solar Energy Materials and Solar Cells, 2016, 144: 117-127. PRADHAN S K, XIAO B, PRADHAN A K. Enhanced photo-response in p-Si/MoS 2 heterojunction-based solar cells [J]. Solar Energy Materials and Solar Cells, 2016, 144: 117-127.
TSAI M L, SU S H, CHANG J K, et al.. Monolayer MoS 2 heterojunction solar cells [J]. ACS Nano, 2014, 8(8): 8317-8322. TSAI M L, SU S H, CHANG J K, et al.. Monolayer MoS 2 heterojunction solar cells [J]. ACS Nano, 2014, 8(8): 8317-8322.
NOVOSELOV K S, JIANG D, SCHEDIN F, et al.. Two-dimensional atomic crystals [J]. Proc. Natl. Acad. Sci. U.S.A., 2005, 102(30): 10451-10453. NOVOSELOV K S, JIANG D, SCHEDIN F, et al.. Two-dimensional atomic crystals [J]. Proc. Natl. Acad. Sci. U.S.A., 2005, 102(30): 10451-10453.
WANG SH SH, RONG Y M, FAN Y, et al.. Shape evolution of monolayer MoS 2 crystals grown by chemical vapor deposition [J]. Chem. Mater., 2014, 26(22): 6371-6379. WANG SH SH, RONG Y M, FAN Y, et al.. Shape evolution of monolayer MoS 2 crystals grown by chemical vapor deposition [J]. Chem. Mater., 2014, 26(22): 6371-6379.
ZHAN Y J, LIU Z, NAJMAEI S, et al.. Large-area vapor-phase growth and characterization of MoS 2 atomic layers on a SiO 2 substrate [J]. Small, 2012, 8(7): 966-971. ZHAN Y J, LIU Z, NAJMAEI S, et al.. Large-area vapor-phase growth and characterization of MoS 2 atomic layers on a SiO 2 substrate [J]. Small, 2012, 8(7): 966-971.
LIN Y C, ZHANG W J, HUANG J K, et al.. Wafer-scale MoS 2 thin layers prepared by MoO 3 sulfurization [J]. Nanoscale, 2012, 4(20): 6637-6641. LIN Y C, ZHANG W J, HUANG J K, et al.. Wafer-scale MoS 2 thin layers prepared by MoO 3 sulfurization [J]. Nanoscale, 2012, 4(20): 6637-6641.
ZHANG Y, CONG R D, ZHAO W, et al.. Improved hetero-interface passivation by microcrystalline silicon oxide emitter in silicon heterojunction solar cells [J]. Sci. Bull., 2016, 61 (10): 787-793. ZHANG Y, CONG R D, ZHAO W, et al.. Improved hetero-interface passivation by microcrystalline silicon oxide emitter in silicon heterojunction solar cells [J]. Sci. Bull., 2016, 61 (10): 787-793.
WEI X X, YU ZH, HU F R, et al.. Mo-O bond doping and related-defect assisted enhancement of photoluminescence in monolayer MoS 2 [J]. AIP Advances, 2014, 4 (12):123004. WEI X X, YU ZH, HU F R, et al.. Mo-O bond doping and related-defect assisted enhancement of photoluminescence in monolayer MoS 2 [J]. AIP Advances, 2014, 4 (12):123004.
LASKAR M R, MA L, KANNAPPAN S, et al.. Large area single crystal (0001) oriented MoS 2 [J]. Appl. Phys. Lett., 2013, 102 (25): 252108. LASKAR M R, MA L, KANNAPPAN S, et al.. Large area single crystal (0001) oriented MoS 2 [J]. Appl. Phys. Lett., 2013, 102 (25): 252108.
SPLENDIANI A, SUN L, ZHANG Y B, et al.. Emerging Photoluminescence in Monolayer MoS 2 [J]. Nano Lett., 2010, 10 (4): 1271-1275. SPLENDIANI A, SUN L, ZHANG Y B, et al.. Emerging Photoluminescence in Monolayer MoS 2 [J]. Nano Lett., 2010, 10 (4): 1271-1275.
NAN H Y, WANG Z L, WANG W H, et al.. Strong photoluminescence enhancement of MoS 2 through defect engineering and oxygen bonding [J]. ACS Nano, 2014, 8(6): 5738-5745. NAN H Y, WANG Z L, WANG W H, et al.. Strong photoluminescence enhancement of MoS 2 through defect engineering and oxygen bonding [J]. ACS Nano, 2014, 8(6): 5738-5745.
MEILLAUD F, SHAH A, BAILAT J, et al.. Microcrystalline silicon solar cells: theory and diagnostic tools [R]. Proceedings of the 4th WCPEC Conference, Hawaii:IEEE, 2006:1572-1575.
MEILLAUD F, SHAH A, BAILAT J, et al.. Microcrystalline silicon solar cells: theory and diagnostic tools [R]. Proceedings of the 4th WCPEC Conference, Hawaii:IEEE, 2006:1572-1575. SHAH A V, SCULATI-MEILLAUD F, BERÉNYI Z J, et al.. Diagnostics of thin-film silicon solar cells and solar panels/modules with variable intensity measurements (VIM) [J]. Solar Energy Materials & Solar Cells, 2011, 95(1): 398-403.
SHAH A V, SCULATI-MEILLAUD F, BERÉNYI Z J, et al.. Diagnostics of thin-film silicon solar cells and solar panels/modules with variable intensity measurements (VIM) [J]. Solar Energy Materials & Solar Cells, 2011, 95(1): 398-403. SABLON K A, LITTLE J W, SERGEEV A, et al.. Solar cell with built-in charge: Experimental studies of diode model parameters [J]. J. Vac. Sci. Technol. A, 2012, 30(4): 04D104-04D104-4.
SABLON K A, LITTLE J W, SERGEEV A, et al.. Solar cell with built-in charge: Experimental studies of diode model parameters [J]. J. Vac. Sci. Technol. A, 2012, 30(4): 04D104-04D104-4. KURU C, YAVUZ S, KARGAR A, et al.. Enhanced power conversion efficiency of graphene/silicon heterojunction solar cells through NiO induced doping [J]. J. Nanosci. Nanotechnol., 2016, 16(1): 1190-1193.
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