相变区纳米硅氧薄膜的微观结构及光学特性

李晓苇; 李云; 郑燕; 高东泽; 于威

doi:10.3788/OPE.20172504.0850

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相变区纳米硅氧薄膜的微观结构及光学特性

现代应用光学 | 更新时间：2020-07-07

- 相变区纳米硅氧薄膜的微观结构及光学特性
- Microstructure and optical characteristics of nanocrystalline silicon oxide film in phase transformation zone
- 光学精密工程 2017年25卷第4期页码：850-856
- 作者机构：
  
  1.河北大学物理科学与技术学院, 河北保定 071000
  2.中国乐凯集团有限公司研究院, 河北保定 071020
- 作者简介：
  
  [ "李晓苇 (1955-), 男, 河北保定人, 教授, 河北大学光学与材料物理研究所所长, 新能源光电器件国家地方联合工程实验室副主任, 河北省光电信息材料重点实验室副主任, 主要从事影像科学与光伏器件, 光学信息诊断方面的研究。E-mail: 18617636694@163.com" ]
  [ "李云 (1986-), 女, 河北石家庄人, 博士研究生, 2014年于河北大学获得硕士学位, 主要从事光电功能材料与器件方面的研究.E-mail:yunli_0317@163.com" ]
  于威 (1965-), 男, 河北保定人, 教授, 博士生导师, 1992年、2002年于河北大学分别获得硕士、博士学位, 主要从事光电功能材料与器件的研究。E-mail:yuwei@hbu.edu.cnYU Wei,E-mail:yuwei@hbu.edu.cn
- 基金信息：
  
  国家自然科学基金青年基金资助项目(61504036);河北省自然科学基金青年基金资助项目(A2016201087);河北省高等学校科学研究指导项目(Z2015121);河北省科技计划项目(13214315);教育部博士点基金项目(20131301120003);河北省高等学校科技研究项目(QN20131115)
- DOI：10.3788/OPE.20172504.0850
  中图分类号： TN304.055;O472.8
- 收稿日期：2016-10-13，
  
  录用日期：2016-12-3，
  
  纸质出版日期：2017-04-25
- 稿件说明：
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李晓苇, 李云, 郑燕, 等. 相变区纳米硅氧薄膜的微观结构及光学特性[J]. 光学精密工程, 2017,25(4):850-856.

Xiao-wei LI, Yun LI, Yan ZHENG, et al. Microstructure and optical characteristics of nanocrystalline silicon oxide film in phase transformation zone[J]. Optics and precision engineering, 2017, 25(4): 850-856.
李晓苇, 李云, 郑燕, 等. 相变区纳米硅氧薄膜的微观结构及光学特性[J]. 光学精密工程, 2017,25(4):850-856. DOI： 10.3788/OPE.20172504.0850.

Xiao-wei LI, Yun LI, Yan ZHENG, et al. Microstructure and optical characteristics of nanocrystalline silicon oxide film in phase transformation zone[J]. Optics and precision engineering, 2017, 25(4): 850-856. DOI： 10.3788/OPE.20172504.0850.

摘要

为了研究硅异质结太阳电池中纳米硅氧薄膜的光电特性，采用甚高频等离子体增强化学气相沉积技术制备了一系列不同晶态比例的nc-SiO

：H薄膜，利用拉曼散射光谱（Raman）、傅里叶变换红外光谱（FTIR）、紫外可见透射光谱以及稳/瞬态光致发光谱等检测手段分别对薄膜的微观结构、键合配置，能带特征以及发光特性进行了表征。薄膜结构特征分析显示，随着氧掺入量的增加，薄膜由微晶向非晶转化，光学带隙逐渐增加，而处在相变区（晶化度约为10%，nc-Si尺寸约为3 nm）的薄膜具有较高的中程有序度、较小的结构因子和较为致密的微观结构。薄膜稳/瞬态光致发光结果显示，一定量的氧掺入可以钝化缺陷、增强发光，而相变区薄膜的发光强度最大，表明较小尺寸的nc-Si具有较强的量子限制效应，nc-Si的量子限制效应发光是主要的载流子复合机制。

Abstract

A series of nc-SiO

:H films were prepared by Very High Frequency Plasma Enhanced Chemical Vapor Deposition (VHF-PECVD)

for the properties study of nanocrystalline silicon oxide films in silicon heterojunction solar cells. The microstructure

bonding configuration

band characteristics and photoluminescence properties of the films were characterized by Raman scattering spectra (Raman)

Fourier transform infrared spectra (FTIR)

UV-VIs transmission spectra and steady/transient state photoluminescence spectra (PL)

respectively. Raman analysis shows that the film structure changes from microcrystalline to amorphous with the increasing of oxygen content. The films proves to have better ordered and denser structure in the phase transformation zone

where the crystallization degree is about 10% and nc-Si particles is about 3 nm. The steady/transient photoluminescence (PL) analysis shows that certain amount of oxygen could passivate defects

thus enhancing the photoluminescence. The highest luminescence intensity was achieved in the phase transformation zone. It indicated that stronger quantum confinement effect PL induced by the smaller nc-Si particles should be the main carrier recombination mechanism.

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Keywords

references

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