脉冲激光沉积薄膜的残余应力测量

董恺琛; 娄帅; 姚杰; 吴军桥; 尤政

doi:10.3788/OPE.20182601.0070

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脉冲激光沉积薄膜的残余应力测量

微纳技术与精密机械 | 更新时间：2020-08-13

- 脉冲激光沉积薄膜的残余应力测量
- Measurement of residual stresses in pulsed laser deposited thin films
- 光学精密工程 2018年26卷第1期页码：70-76
- 作者机构：
  
  1.清华大学精密仪器系精密测试技术及仪器国家重点实验室北京市未来芯片技术高精尖创新中心, 北京 100084
  2.美国加州大学伯克利分校材料科学与工程系, 伯克利 94720
  3.美国劳伦斯伯克利国家实验室材料科学部, 伯克利 94720
- 作者简介：
  
  [ "董恺琛(1989-), 男, 黑龙江哈尔滨人, 博士研究生, 2012年于清华大学获得学士学位, 主要从事微机电系统技术的研究。E-mail:dkc12@mails.tsinghua.edu.cn" ]
  [ "尤政(1963-), 男, 江苏扬州人, 教授, 中国工程院院士, 长江学者, 主要研究领域为微米/纳米技术、微光机电系统集成、微纳卫星技术。E-mail:yz-dpi@mail.tsinghua.edu.cn" ]
- 基金信息：
  
  中国国家留学基金资助项目(201406210211)
- DOI：10.3788/OPE.20182601.0070
  中图分类号： TH704;TH87
- 收稿日期：2017-07-10，
  
  录用日期：2017-8-31，
  
  纸质出版日期：2018-01-25
- 稿件说明：
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董恺琛, 娄帅, 姚杰, 等. 脉冲激光沉积薄膜的残余应力测量[J]. 光学精密工程, 2018,26(1):70-76.

Kai-chen DONG, Shuai LOU, Jie YAO, et al. Measurement of residual stresses in pulsed laser deposited thin films[J]. Optics and precision engineering, 2018, 26(1): 70-76.
董恺琛, 娄帅, 姚杰, 等. 脉冲激光沉积薄膜的残余应力测量[J]. 光学精密工程, 2018,26(1):70-76. DOI： 10.3788/OPE.20182601.0070.

Kai-chen DONG, Shuai LOU, Jie YAO, et al. Measurement of residual stresses in pulsed laser deposited thin films[J]. Optics and precision engineering, 2018, 26(1): 70-76. DOI： 10.3788/OPE.20182601.0070.

摘要

为了测量脉冲激光沉积法制备的小面积薄膜的残余应力，并解决Stoney公式在特定情况下误差较大的问题，本文提出了一种基于悬臂梁结构和数值计算的薄膜残余应力测量方法。该方法以初始曲率为零的原子力显微镜探针作为衬底梁，在衬底梁上使用脉冲激光沉积方法沉积被测薄膜，并记录衬底梁在薄膜沉积前后的翘曲形貌变化，再结合薄膜厚度、衬底梁几何尺寸、所涉及材料的杨氏模量与泊松比等其他参数，借助数值计算对实验数据进行分析，得出被测薄膜的残余应力。使用该方法测出：基于脉冲激光沉积法在高温环境下制备的二氧化钒薄膜的残余应力为-340 MPa，与文献报道的结果相符。本文提出的基于悬臂梁结构和数值计算的薄膜残余应力测量方法具有适用范围广、准确度好、实验成本低的优点。

Abstract

To measure the residual stresses in thin films with limited area prepared by pulsed laser deposition

as well as to solve the problem of the relatively large error introduced by the Stoney equation under certain circumstances

a measurement method for residual stresses in thin films based on cantilever structures and numerical calculation was proposed in this article. In this method

atomic force microscopy probes with zero initial curvature were used as substrate cantilevers

and thin films were deposited on the substrate cantilevers using pulsed laser deposition. The bending profiles of the substrate cantilevers before and after thin film deposition were recorded and used in numerical calculation

together with other parameters including the thin film thicknesses

the geometries of the substrate cantilevers

and the Young's moduli and the Poisson's ratios of the involved materials

to analyze the experimental data and obtain the residual stresses in the thin films. By using this method

the residual stress in vanadium dioxide thin films

prepared by pulsed laser deposition in a high-temperature environment

is measured to be -340 MPa

corresponding to the value reported in the literature. The measurement method for residual stresses in thin films proposed in this article

which is based on cantilever structures and numerical calculation

has the advantages of wide versatility

good accuracy

and low costs.

关键词

Keywords

references

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