无源MEMS压力开关的设计与制备

刘益芳; 陈丹儿; 戴婷婷

doi:10.3788/OPE.20182605.1133

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无源MEMS压力开关的设计与制备

微纳技术与精密机械 | 更新时间：2020-08-13

- 无源MEMS压力开关的设计与制备
- Design and fabrication of passive MEMS pressure switch
- 光学精密工程 2018年26卷第5期页码：1133-1139
- 作者机构：
  
  厦门大学航空航天学院, 福建厦门 361005
- 作者简介：
  
  [ "刘益芳(1976-), 女, 福建莆田人, 副教授, 1999年和2002年于东南大学分别获得学士学位和硕士学位, 2010年于厦门大学获得博士学位, 主要从事MEMS传感器、微硅电子隧道陀螺仪的控制与测试和微弱信号检测等方面的研究。E-mail:yfliu@xmu.edu.cn" ]
  [ "陈丹儿(1992-), 女, 广东汕尾人, 硕士研究生, 2013年于厦门大学获得学士学位, 主要从事MEMS传感器的研发工作。E-mail:chendaner@stu.xmu.edu.cn" ]
- 基金信息：
  
  国家自然科学基金资助项目(61404111)
- DOI：10.3788/OPE.20182605.1133
  中图分类号： TH765.3
- 收稿日期：2017-09-15，
  
  录用日期：2017-11-13，
  
  纸质出版日期：2018-05-25
- 稿件说明：
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刘益芳, 陈丹儿, 戴婷婷. 无源MEMS压力开关的设计与制备[J]. 光学精密工程, 2018,26(5):1133-1139.

Yi-fang LIU, Dan-er CHEN, Ting-ting DAI. Design and fabrication of passive MEMS pressure switch[J]. Optics and precision engineering, 2018, 26(5): 1133-1139.
刘益芳, 陈丹儿, 戴婷婷. 无源MEMS压力开关的设计与制备[J]. 光学精密工程, 2018,26(5):1133-1139. DOI： 10.3788/OPE.20182605.1133.

Yi-fang LIU, Dan-er CHEN, Ting-ting DAI. Design and fabrication of passive MEMS pressure switch[J]. Optics and precision engineering, 2018, 26(5): 1133-1139. DOI： 10.3788/OPE.20182605.1133.

摘要

为了克服传统机械式和电子式压力开关的体积大、制作工艺复杂以及不易与后续电路集成等缺点，论文采用具有金属引线台阶覆盖能力的玻璃浆料封装技术进行了无源MEMS压力开关的设计和制备。设计的无源MEMS压力开关的整体结构方案主要包括硅盖板上的压力敏感膜、硅岛、上电极和微阻挡凸台以及玻璃基底上的玻璃浆料和下电极。通过仿真优化了压力敏感膜、硅岛和上下电极的关键尺寸。经过三次湿法腐蚀工艺流程制得了双阻挡凸台、硅岛和感压膜片。通过玻璃浆料热压工艺将硅盖片、玻璃基底和金属引线三者键合成一体，工艺结果显示双阻挡凸台的高度和感压膜片的厚度很好地控制在8 μm和50 μm，而且经测试，MEMS压力开关的阈值压力为125 kPa。

Abstract

In order to overcome the shortcomings of traditional mechanical and electronic pressure switches

such as the production process is complex and it is difficult to integrate with the follow-up circuit

bulky and so on

the design and preparation of passive MEMS pressure switch were developed by using glass frit encapsulation technology with metal lead coverage in this paper. The overall structure of the passive MEMS pressure switch was designed to include the pressure sensitive film

the silicon island and the upper electrode on the silicon cover and the micro-barrier bumps

the glass paste and the lower electrode on the glass substrate. The key dimensions of pressure sensitive film

silicon islands and upper and lower electrodes were optimized by simulation. After three wet etching processes

double barrier bump

silicon island and pressure sensitive film were fabricated. The silicon cover

the glass substrate and the metal lead were then bonded together as a whole by glass frit thermal-pressure bonding process. The results show that the height of the double-barrier bumps and the thickness of the pressure-sensitive film are well controlled at 8 μm and 50 μm

respectively. And the threshold pressure of the MEMS pressure switch is 125 kPa.

关键词

Keywords

references

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