纳米硅氧多层薄膜低温调控及其发光特性

李云; 张博惠; 高东泽; 丛日东; 路万兵

doi:10.3788/OPE.20182608.1960

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纳米硅氧多层薄膜低温调控及其发光特性

现代应用光学 | 更新时间：2020-08-13

- 纳米硅氧多层薄膜低温调控及其发光特性
- Low temperature deposition and photoluminescence properties of silicon oxide multilayer films
- 光学精密工程 2018年26卷第8期页码：1960-1966
- 作者机构：
  
  河北大学物理科学与技术学院, 河北保定 071000
- 作者简介：
  
  [ "李云(1986-), 女, 河北石家庄人, 博士, 2014年于河北大学获得硕士学位, 现为河北大学物理科学与技术学院光学工程专业博士, 主要从事光电功能材料与器件方面的研究.E-mail:yunli_0317@163.com" ]
  [ "路万兵(1980-)男, 河北保定人, 副教授, 硕士生导师, 2005年、2011年于河北大学分别获得硕士、博士学位, 现为河北大学物理科学与技术学院教师, 主要从事光电功能材料与器件的研究.E-mail:wanbinglu@hbu.edu.cn" ]
- 基金信息：
  
  国家自然科学基金青年基金资助项目(61504036);河北省自然科学基金青年基金资助项目(A2016201087);河北省高等学校科学研究指导项目(Z2015121)
- DOI：10.3788/OPE.20182608.1960
  中图分类号： O484.41
- 收稿日期：2017-12-06，
  
  录用日期：2018-2-9，
  
  纸质出版日期：2018-08-25
- 稿件说明：
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李云, 张博惠, 高东泽, 等. 纳米硅氧多层薄膜低温调控及其发光特性[J]. 光学精密工程, 2018,26(8):1960-1966.

Yun LI, Bo-hui ZHANG, Dong-ze GAO, et al. Low temperature deposition and photoluminescence properties of silicon oxide multilayer films[J]. Optics and precision engineering, 2018, 26(8): 1960-1966.
李云, 张博惠, 高东泽, 等. 纳米硅氧多层薄膜低温调控及其发光特性[J]. 光学精密工程, 2018,26(8):1960-1966. DOI： 10.3788/OPE.20182608.1960.

Yun LI, Bo-hui ZHANG, Dong-ze GAO, et al. Low temperature deposition and photoluminescence properties of silicon oxide multilayer films[J]. Optics and precision engineering, 2018, 26(8): 1960-1966. DOI： 10.3788/OPE.20182608.1960.

摘要

为了研究硅量子点薄膜在太阳电池中的应用，本文采用甚高频等离子体增强化学气相沉积技术，低温制备了镶嵌有纳米晶硅（nc-Si）的纳米硅氧多层（nc-SiOx/a-SiO

）薄膜样品。TEM图显示，通过调整nc-SiO

层的厚度，实现了薄膜多层结构的低温调控。利用拉曼散射光谱（Raman）、紫外可见透射光谱以及稳/瞬态光致发光（PL）谱等检测手段对薄膜的微观结构、能带特征以及发光特性进行了分析。光吸收谱分析表明，nc-Si粒子尺寸及其a-SiO

边界层共同影响薄膜的光学带隙。稳/瞬态PL谱分析表明，多层结构发光表现为一个固定于1.19 eV附近的发光峰和一个随nc-SiO

层厚度增加而发生红移的发光峰，其中固定发光峰归因于非晶SiO

网络中缺陷发光，发光衰减寿命约在4.6

s，峰位可调的发光峰为nc-Si量子限制效应-缺陷态复合发光，对应两个发光衰减过程，其中慢发光衰减寿命随nc-SiO

层厚度增加由9.9

s增加到16.5

s，快发光衰减过程基本保持不变。低温PL谱的温度依赖特性进一步表明，薄膜样品的发光主要表现为nc-Si的量子限制效应发光。

Abstract

Nc-SiO

/a-SiO

multilayer films were deposited using very-high-frequency plasma enhanced chemical vapor deposition (VHF-PECVD)

to investigate the application of silicon quantum dots in solar cells. Transmission electron microscopy (TEM) images revealed that a multilayer structure was achieved by adjusting the thickness of the nc-SiO

layer at low temperature. Based on Raman scattering

UV-visible transmission

and steady/transient photoluminescence (PL) spectra

the microstructure

energy band

and photoluminescence properties of the films were characterized

respectively. Absorption spectra analysis indicated that the combination of the nc-Si and a-SiO

matrices affected the optical band gap of the films. The PL spectra of the multilayer films exhibited two distinct peaks as the thickness of the nc-SiO

layer was increased:a peak fixed at 1.19 eV

and another red-shifted peak near 1.45 eV. The fixed PL peak originated from radiative defects in the a-SiO

matrix

which corresponds to a PL decay life of approximately 4.6

s. The red-shifted PL peak was attributed to a complex quantum confinement effect-defect state luminescence mechanism. This is related to two PL decay processes including a slow PL decay life

which increased from 9.9 to 16.5

and a fast decay life

which was constant. The temperature-dependent PL properties further signified that the origin of the PL of the multilayer films was mainly attributed to quantum confinement effects in nc-Si.

关键词

Keywords

references

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