双通道MEMS微波功率传感器的匹配特性

魏良栋; 戴瑞萍; 陆颢瓒

doi:10.3788/OPE.20182609.2133

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双通道MEMS微波功率传感器的匹配特性

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- 双通道MEMS微波功率传感器的匹配特性
- Impedance matching of MEMS double-channel microwave power sensor
- 光学精密工程 2018年26卷第9期页码：2133-2138
- 作者机构：
  
  南京邮电大学电子与光学工程学院, 江苏南京 210023
- 作者简介：
  
  [ "魏良栋(1994-), 男, 江苏宿迁人, 2017年于南京邮电大学通达学院获得学士学位, 主要从事MEMS微波功率传感器及其检测系统的研究。E-mail:weild9410@163.com" ]
- 基金信息：
  
  国家青年自然科学基金资助项目(61704086);江苏省青年自然科学基金资助项目(BK20140890);南京邮电大学国自基金孵化资助项目(NY215139);南京邮电大学国自基金孵化资助项目(NY217039);中国博士后科学基金资助项目(2017M621692);江苏省博士后基金资助项目(1701131B)
- DOI：10.3788/OPE.20182609.2133
  中图分类号： TN62;TP212.1
- 收稿日期：2018-05-29，
  
  录用日期：2018-7-2，
  
  纸质出版日期：2018-09-25
- 稿件说明：
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魏良栋, 戴瑞萍, 陆颢瓒. 双通道MEMS微波功率传感器的匹配特性[J]. 光学精密工程, 2018,26(9):2133-2138.

Liang-dong WEI, Rui-ping DAI, Hao-zan LU. Impedance matching of MEMS double-channel microwave power sensor[J]. Optics and precision engineering, 2018, 26(9): 2133-2138.
魏良栋, 戴瑞萍, 陆颢瓒. 双通道MEMS微波功率传感器的匹配特性[J]. 光学精密工程, 2018,26(9):2133-2138. DOI： 10.3788/OPE.20182609.2133.

Liang-dong WEI, Rui-ping DAI, Hao-zan LU. Impedance matching of MEMS double-channel microwave power sensor[J]. Optics and precision engineering, 2018, 26(9): 2133-2138. DOI： 10.3788/OPE.20182609.2133.

摘要

为了降低双通道MEMS微波功率传感器的回波损耗，提高传感器的测量精度，对MEMS悬臂梁的匹配特性进行了研究。首先，通过双通道MEMS微波功率传感器结构构建S参数的理论解析模型，分析了双通道MEMS微波功率传感器的匹配特性，得到了MEMS悬臂梁的间距和回波损耗系数

的关系；接着利用有限元软件HFSS进行仿真，并和理论结果比较；然后，设计并制作了双通道微波功率传感器；最后，对该传感器的匹配特性进行了测试和分析。实验结果表明：当MEMS悬臂梁的间距为1.6

m时，该传感器在测量8~12 GHz频率内的微波信号时，回波损耗小于-19 dB。理论和仿真结果较为相符，因此S参数的理论解析模型可以较好地反映双通道MEMS微波功率传感器的匹配特性，对双通道MEMS微波功率传感器的设计具有一定的指导意义。

Abstract

To reduce the reflection loss of Micro-Electro-Mechanical System (MEMS) double-channel microwave power sensors and improve their measurement accuracy

it is necessary to investigate the impedance matching of MEMS cantilever beams. First

an analytical model of the S-parameters was constructed using the structure of the MEMS double-channel microwave power sensor. The impedance matching of the MEMS double-channel microwave power sensor was analyzed

and the relationship between the spacing of the MEMS cantilever beams and return loss

was obtained. The simulation was performed using a finite element software-high frequency structure simulator (HFSS)-and the simulation results were compared with the corresponding analytical results. Next

a double-channel microwave power sensor was designed and fabricated. Finally

the impedance matching of the sensor was tested and analyzed. The experimental results reveal that for a microwave signal in the frequency range 8-12 GHz

when the distance between the MEMS cantilever beam is 1.6

the sensor has a return loss of less than -19 dB. The analytical and simulation results are in good agreement

confirming that the analytical model of the S-parameters can reflect the impedance matching of MEMS double-channel microwave power sensors. Thus

the analytical model can be used as a guide for the design of MEMS double-channel microwave power sensors.

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