热压增大光刻胶光栅占宽比的方法及其应用

郑衍畅; 胡华奎; 邱克强; 王海; 徐向东; 付绍军

doi:10.3788/OPE.20192701.0094

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热压增大光刻胶光栅占宽比的方法及其应用

微纳技术与精密机械 | 更新时间：2020-08-13

- 热压增大光刻胶光栅占宽比的方法及其应用
- Method for increasing duty cycle of photoresist grating by hot pressing and its application
- 光学精密工程 2019年27卷第1期页码：94-100
- 作者机构：
  
  1.安徽工程大学机械与汽车工程学院，安徽芜湖 241000
  2.中国科学技术大学国家同步辐射实验室，安徽合肥 230029
- 作者简介：
  
  [ "郑衍畅(1988-)，男，山东济宁人，博士，讲师，2010年于合肥工业大学获得学士学位，2015年于中国科学技术大学获得博士学位，主要从事衍射光学元件设计与制作的研究。E-mail: yczheng@ahpu.edu.cn" ]
- 基金信息：
  
  国家自然科学基金资助项目(11705001);安徽省自然科学基金资助项目(1808085QA12);安徽省自然科学基金资助项目(1708085ME105);安徽工程大学引进人才科研启动基金资助项目(2016YQQ013)
- DOI：10.3788/OPE.20192701.0094
  中图分类号： O436.1; TN305.7
- 收稿日期：2018-09-11，
  
  录用日期：2018-10-16，
  
  纸质出版日期：2019-01-25
- 稿件说明：
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郑衍畅, 胡华奎, 邱克强, 等. 热压增大光刻胶光栅占宽比的方法及其应用[J]. 光学精密工程, 2019,27(1):94-100.

Yan-chang ZHENG, Hua-kui HU, Ke-qiang QIU, et al. Method for increasing duty cycle of photoresist grating by hot pressing and its application[J]. Optics and precision engineering, 2019, 27(1): 94-100.
郑衍畅, 胡华奎, 邱克强, 等. 热压增大光刻胶光栅占宽比的方法及其应用[J]. 光学精密工程, 2019,27(1):94-100. DOI： 10.3788/OPE.20192701.0094.

Yan-chang ZHENG, Hua-kui HU, Ke-qiang QIU, et al. Method for increasing duty cycle of photoresist grating by hot pressing and its application[J]. Optics and precision engineering, 2019, 27(1): 94-100. DOI： 10.3788/OPE.20192701.0094.

摘要

全息光刻-单晶硅各向异性湿法刻蚀是制作大高宽比硅光栅的一种重要方法，而如何增大光刻胶光栅的占宽比，以提高制作工艺宽容度和光栅质量是急需解决的问题。本文提出了一种热压增大光刻胶光栅占宽比的方法，该方法通过加热加压直接将光刻胶光栅线条展宽。论文详细阐述了其工艺过程，探究了占宽比增加值随施压载荷、温度的变化规律，讨论了施压垫片对光刻胶光栅质量的影响。应用此方法制作了周期为500 nm的硅光栅，光栅线条的高宽比达到了12.6，氮化硅光栅掩模的占宽比高达0.72。热压增大光刻胶光栅占宽比的方法工艺简单、可靠，无需昂贵设备、成本低，能够有效增大占宽比，且获得的光栅掩模质量高、均匀性好，满足制作高质量大高宽比硅光栅的要求。

Abstract

Holographic lithography combined with anisotropic wet etching of monocrystalline silicon is an important method for the fabrication of high-aspect-ratio silicon gratings. However

increasing the duty cycle of photoresist grating to improve the fabrication process tolerance and grating quality is a major problem. We present a method for increasing the duty cycle of photoresist grating by hot pressing. The principle of this method is to broaden the width of photoresist grating lines directly by heating and pressurizing. The fabrication process is described in detail. The variation of the duty cycle with pressure load and temperature was studied

and the influence of pressing gasket on the grating quality was investigated. Using this method

a silicon grating with a period of 500 nm was successfully fabricated. The aspect ratio of the grating line is 12.6

and the duty cycle of silicon nitride mask is as high as 0.72. This method is simple

reliable

and affordable. It can effectively increase the duty cycle

and the obtained grating mask has high quality and good uniformity

which meets the requirements of fabricating high-quality silicon gratings with high aspect ratios.

关键词

Keywords

references

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〈111〉晶向标定方法及其在湿法刻蚀硅光栅中的应用