Ga掺杂ZnO微米棒紫外光探测器制备与特性

袁兆林; 吴永炜; 余璐瑶; 何剑锋; 徐能昌; 汪雪元; 路鹏飞

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Ga掺杂ZnO微米棒紫外光探测器制备与特性

更新时间：2024-01-23

- Ga掺杂ZnO微米棒紫外光探测器制备与特性
- Fabrications and characteristics of Ga-doped ZnO microrods ultraviolet photodetectors
- 光学精密工程 2024年页码：1-10
- 作者机构：
  
  1.东华理工大学信息工程学院，江西南昌 330013
  2.东华理工大学软件学院，江西南昌 330013
  3.江西省核地学数据科学与系统工程技术研究中心，江西南昌 330013
- 作者简介：
  
  E-mail：yzlyx98@sina.com
- 基金信息：
  
  国家自然科学基金(11865002);江西省自然科学基金(20212BAB201003);江西省核地学数据科学与系统工程技术研究中心开放基金(JETRCNGDSS202209);东华理工大学博士科研启动基金(DHBK2019214);江西省研究生创新研究基金(YC2021-S624;YC2023-S591)
- DOI：
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袁兆林,吴永炜,余璐瑶等.Ga掺杂ZnO微米棒紫外光探测器制备与特性[J].光学精密工程,

YUAN Zhaolin,WU Yongwei,YU Luyao,et al.Fabrications and characteristics of Ga-doped ZnO microrods ultraviolet photodetectors[J].Optics and Precision Engineering,
袁兆林,吴永炜,余璐瑶等.Ga掺杂ZnO微米棒紫外光探测器制备与特性[J].光学精密工程, DOI：10.37188/OPE.XXXXXXXX.0001

YUAN Zhaolin,WU Yongwei,YU Luyao,et al.Fabrications and characteristics of Ga-doped ZnO microrods ultraviolet photodetectors[J].Optics and Precision Engineering, DOI：10.37188/OPE.XXXXXXXX.0001

摘要

为了获得高性能和低成本的氧化锌（ZnO）基紫外光探测器，使用Ga掺杂ZnO（ZnO：Ga）作为光敏层有望实现它。本文采用简便的水热法，合成了不同Ga掺杂浓度ZnO：Ga微米棒，Ga与Zn的原子比分别为0%（未掺杂）、0.5%，1%，2%和4%。首先使用X射线衍射仪（XRD）测试所有样品的晶体结构，发现它们都为六方纤锌矿结构的ZnO。采用扫描电子显微镜（SEM）观察它们的形貌，它们都呈现棒状结构。进一步，备好叉指图案氟掺杂的氧化锡（FTO）导电玻璃基底，将不同Ga掺杂浓度ZnO∶Ga微米棒分别涂覆在FTO上，制备出五种简单结构紫外光探测器，系统研究了它们的性能。结果表明：所有ZnO∶Ga微米棒紫外光探测器对365 nm紫外光显示出良好的响应。在这些器件中，1% Ga掺杂ZnO：Ga微米棒紫外光探测器具有最佳性能，经计算，在365 nm波长处，它的响应度、增益和比探测率分别为13.13 A/W （5 V），44.63 （5 V），3.31×10,12 ,Jones，响应时间和衰减时间分别为12.3 s和36.4 s。说明在ZnO微米棒中进行合适Ga掺杂，其紫外光探测器性能能有效提高。该研究有助于基于ZnO∶Ga材料的紫外光探测器和其它相关器件发展。

Abstract

In order to obtain high-performance and low-cost zinc oxide （ZnO） -based ultraviolet photodetectors， it is expected to be achieved by using Ga-doped ZnO （ZnO：Ga） as photosensitive layers. In this paper， we synthetized ZnO：Ga microrods with different Ga doping concentrations via a facile hydrothermal method， the atomic ratios of Ga to Zn were 0% （undoped ZnO）， 0.5%， 1%， 2% and 4%， respectively. Firstly， we measured the crystal structures of all the samples using an X-ray diffractometer （XRD）， they were all hexagonal wurtzite structure of ZnO. Their morphologies were observed by a scanning electron microscope （SEM）， they all displayed rod-like structures. Furthermore， the ZnO：Ga microrods with different Ga concentrations were coated on the interdigital patterned fluorine-doped tin oxide （FTO） glass substrates， respectively， we fabricated five ultraviolet photodetectors with simple structure， their performances were systematically investigated. The results showed that all the ZnO：Ga microrods ultraviolet photodetectors exhibited good responses to 365 nm light. Among these devices， the 1% Ga-doped ZnO microrods ultraviolet photodetector had the optimal performance. By calculation， at a wavelength of 365 nm， its responsivity， gain and specific detectivity were 13.13 A/W （5 V）， 44.63 （5V） and 3.31×10,12, Jones， respectively， the response time and decay time were 12.3 s and 36.4 s， respectively. The results indicates that ZnO microrods were doped with a proper Ga concentration， the performance of this ultraviolet photodetector could be effectively improved. This work will be helpful for developing ultraviolet photodetectors and other related devices based on ZnO：Ga materials.

关键词

镓掺杂氧化锌微米棒水热法紫外光探测器响应度

Keywords

Ga-doped ZnO microrodshydrothermal methodultraviolet photodetectorresponsivity

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