串联光伏电池非晶硅薄膜的Nd3+:YAG 激光辅助掺杂与同时毛化

VASA N J; PALANI I A; SINGAPERUMAL; OKADA

doi:10.3788/OPE.20111909.2263

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串联光伏电池非晶硅薄膜的Nd³⁺:YAG 激光辅助掺杂与同时毛化

光学精密工程暨纳米科技国际研讨会论文 | 更新时间：2020-08-12

- 串联光伏电池非晶硅薄膜的Nd³⁺:YAG 激光辅助掺杂与同时毛化
- Nd³⁺∶YAG laser assisted doping and simultaneous texturization of amorphous Si film for tandem photovoltaic cell
- 光学精密工程 2011年19卷第9期页码：2263-2270
- 作者机构：
  
  1. Department of Engineering Design, Indian Institute of Technology Madras Chennai,India
  2. Department of Mechanical Engineering, Indian Institute of Technology Madras Chennai,India
  3. Graduate School of Information Science and Electrical Engineering, Kyushu University Fukuoka,Japan
- 作者简介：
- 基金信息：
  
  Supported by MEE 0607167 NFSCNILE()
- DOI：10.3788/OPE.20111909.2263
  中图分类号： TM914.4;TN304.055
- 收稿日期：2011-03-08，
  
  修回日期：2011-04-30，
  
  网络出版日期：2011-09-26，
  
  纸质出版日期：2011-09-26
- 稿件说明：
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VASA N J, PALANI I A, SINGAPERUMAL, OKADA. 串联光伏电池非晶硅薄膜的Nd3+:YAG 激光辅助掺杂与同时毛化[J]. 光学精密工程, 2011,19(9): 2263-2270

VASA N J, PALANI I A, SINGAPERUMAL, OKADA. Nd3+∶YAG laser assisted doping and simultaneous texturization of amorphous Si film for tandem photovoltaic cell[J]. Editorial Office of Optics and Precision Engineering, 2011,19(9): 2263-2270
VASA N J, PALANI I A, SINGAPERUMAL, OKADA. 串联光伏电池非晶硅薄膜的Nd3+:YAG 激光辅助掺杂与同时毛化[J]. 光学精密工程, 2011,19(9): 2263-2270 DOI： 10.3788/OPE.20111909.2263.

VASA N J, PALANI I A, SINGAPERUMAL, OKADA. Nd3+∶YAG laser assisted doping and simultaneous texturization of amorphous Si film for tandem photovoltaic cell[J]. Editorial Office of Optics and Precision Engineering, 2011,19(9): 2263-2270 DOI： 10.3788/OPE.20111909.2263.

摘要

对结合激光辅助掺杂和毛化方法合成的光伏电池用Sb掺杂非晶硅薄膜进行了研究。首先

用阈值通量为460 mJ/cm

的激光照射镀有200~300 nm厚Sb的非晶硅薄膜进行施主扩散。为激活施主

样品用230 mJ/cm

的低激光通量再一次进行处理。进行施主激光扩散和活化时

激光光斑的重叠度达到光斑大小的90%

因此随后诱发了薄膜表面的毛化。多晶毛化峰由扫描电子显微镜、喇曼光谱、原子力显微镜等多种表征手段进行了验证

处理后的样品其正面和背面的拉曼光谱均出现了521 cm

-1

的晶体峰值。样品的n型特征得到了Hall效应测试的证实

同时证明了掺杂的有效性。表面毛化粗糙度达到450 nm

并且观测到了光电导和吸收光谱的增强

这些均证实了样品光伏性质的改善。

Abstract

A textured Sb-doped a-Si film is synthesised using laser-assisted doping combined with texturing for a photovoltaic cell applictaion. The amorphous silicon films coated with Sb to a thickness of 200-300 nm are treated intially with a threshold laser fluence of 460 mJ/cm

for dopant diffusion. To reactivate the dopant

the samples are retreated with a lower laser fluence of 230 mJ/cm

. The laser diffusion and dopant activation are performed by overlapping the laser spots to 90% of its size

so as to subsequently induce texture on the surface. Generation of polycrystalline textured peaks is confirmed with different characterization methods

such as SEM

Raman Spectroscopy

AFM

resistance and absorbance measurements. Treated samples show a crystalline peak of 521 cm

-1

with Raman spectroscopy taken from the front and back of the sample. The n-type characteristics of the samples is confirmed through Hall effect measurements

which confirms also the efficient doping. Surface texture with a roughness parameter of 450 nm and improvement in photocondcutivity and absorbance spectrosocpy values are observed

which confirmes the improved photovolataic properties of the samples.

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Keywords

references

FFLER J L, GORDIJN A, STOLK R L,et al.. Amorphous and 'micromorph silicon tandemcells with high open-circuit voltage [J]. Solar Energy Materials & Solar Cells, 2005, 87:251-259.[2] PALANI I A, VASA N J, SINGAPERUMAL M. Crystallization and ablation in annealing of amorphous-Si thin film on glass and crystalline-Si substrates irradiated by third harmonics of Nd3+:YAG laser [J]. Materials Science in Semiconductor Processing, 2008, 11:107-116.[3] KIM C H, JUNG S H, JEON J H, et al.. A simple low-temperature laser-doping employing phosphosilicate glass and borosilicate glass films for the source and drain formation in poly-Si thin film transistors [J]. Thin Solid Films, 2001, 397: 4-7. [4] PALANI I A, VASA N J, SINGAPERUMAL M, et al.. Investigation on production of highly textured Sb doped polycrystalline silicon using solid state Nd∶YAG laser for photovoltaic application[J].SPIE, 2010, 7584:758410-8.[5] DOBRZANSKI LA, DRYGALAA A, GOLOMBEKA K, et al.. Laser surface treatment of multicrystalline silicon for enhancing optical properties[J]. Material Processing Technology, 2008, 201:291-296.[6] CHUNG H Y, CHEN C H, CHU H S. Analysis of surface texturization of solar cells by molecular dynamics simulations [J]. Int. J. Photoenergy. 2008, Article id 540971 doi:10.1155/2008/540971.[7] PALANI I A, VASA N J, SINGAPERUMAL M, et al.. Investigation on laser-annealing and subsequent laser-nanotexturing of amorphous silicon (a-Si) films for photovoltaic application [J]. JLMN-Journal of Laser Micro/Nanoengineering, 2010, 5:151-155.[8] PALANI I A, VASA N J, SINGAPERUMAL M, et al.. Annealing and texturing of a-Si film using Nd3+∶YAG laser with Gaussian and flat-top beam profiles. IEEE Region 10 Annual International Conference, Proceedings/TENCON, 2010, 5686429: 1909-1914.[9] PALANI I A, VASA N J, SINGAPERUMAL M, et al.. Influence of laser wavelength and beam profile on Nd3+∶YAG laser assisted formation of polycrystalline-Si films [J]. Thin Solid Films, 2010, 518:4183-4190.

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