摘要:A new interferometer for extreme ultraviolet (EUV) radiation with a laser produced plasma (LPP) laboratory source is under construction. The LPP source is operated with a Sn solid rod target on which pulsed YAG laser is focused to produce high temperature plasma emitting EUV radiation. The source is equipped with a newly designed debris stopper protecting a condenser multilayer mirror from the particle debris of the target. The condenser mirror focuses the light onto an EUV beam-splitter to form transmitted and reflected paths for producing interference fringes of a sharing type. The optical configuration is of a common path based on a triangular path type with a focusing at the beam-splitter, which is enabled to produce fringes by a low coherence radiation with a standard optical quality beam-splitter. The fringes are recorded by an imaging plate with pixels as small as 25μm. The dynamic range of linearity in detection of the EUV light was found to be more than 104 with sensitivity of 104 photons/pixel, enough for the purpose of interferogram recording, possibly with one laser shot.
摘要:This article describes the task of optical designers to achieve a better design. This is followed by some discussions on the necessity of total design that takes all the elements into account from its light source to the final image plane. Methods are given to simulate rays from a bending magnet and an undulator, surface figure errors, and thermal deformations. Some examples are given for an undulator beamline and an EUVL optical system, together with tolerance estimates of the figure error and thermal deformation.
摘要:The authors have developed an experimental system for the studies of extreme ultraviolet projection lithography at 13.0nm wavelength, which includes a laser plasma source, an ellipsoidal condenser, a transmission mask and a Schwarzschild optics. The optical system is optimized to achieve 0.1μm resolution over a 0.1mm diameter image field of view and the mirrors of the objective were coated with Mo/Si multilayer to provide 60% reflectance at near normal incidence angle for 13.0nm radiation.
摘要:ASET, Association of Super-advanced Electronics Technologies, has been taking the initiative in developing EUV lithography technology in Japan for the past three years. The aspherical mirror metrology using a visible light point diffraction interferometer (PDI), the wave front measurement using an at-wavelength PDI, and an at wavelength reflectometry for multilayers, various imaging simulations, multilayer coatings for the mask, the development of absorber materials for mask patterning, the mask substrate cleaning technique, and various photoresist processes have been developed. The visible light PDI employs a 0.5-μm pinhole as an aperture to generate an ideal spherical wave front and can measure a 0.3-N A mirror maximum. The at-wavelength PDI can measure the wave front error of the projection optics. The at-wavelength reflectometer can measure the reflectivity of multilayers and the round-robin test is taking place among ASET, the ALS in Lawrence Berkeley, and BESSY in Germany. The mask cleaning technique employs a supersonic hydro-cleaning technique. We have confirmed that the single layer resists can be used for EUV lithography.
关键词:ultraviolet lithography;aspherical mirrors;alignment systems
YI Fu-ting,PENG Liang-qiang,ZHANG Ju-fang,HAN Yong,XIAN Ding-chang
2001, 9(5): 430-434.
摘要:LIGA technique has been developed since 1993 at BSRF, including the fabrication of LIGA mask, deep X ray lithography, electroplating, the pouring molding and the applications in some fields. The LIGA mask with gold absorbing structures of 20μm thickness and 5μm width and Kapton membrane of around 5μm thickness has been successfully fabricated and applied to the deep X ray lithography with the PMMA structure of 1mm thickness or above. The beamline from a wiggler is used for the deep X ray lithography of LIGA station and is open to other institutes researching the deep X ray lithography. The normal process of LIGA technique with the exception of molding has been established with the PMMA structures of 500μm thickness at BSRF. The largest aspect ratio of PMMA structures can reach about 50 with the height of 500μm and the lateral size of 10μm. The nickel and copper structures with the thickness of 0.5mm and 1mm have been made by using the electroplating technique. The SU8 as a resist material of deep etch lithography with UV light is also developed in the fabrication of LIGA mask and some devices at BSRF.Electromagnetic stepping micro motor, heat exchange, accelerator, structures used in the EDM (electro discharge machining) are being developed for the future applications.
摘要:According to the SIA roadmap, by the year of 2006, minimum feature size of 70 nm on wafer is required. Research in U.S., Japan and Europe is aimed at developing and demonstrating an EUVL tool for critical feature size of 70 nm and below. In Japan, Himeji institute of technology (HIT) has developed an EUVL laboratory tool , which has a practical exposure field of 30mm?28mm. The alignment and assembly of three aspherical mirror optics were completed. A final wave front error of less than 3 nm was achieved. Using this system, exposure experiments are performed using synchrotron facility of New Subaru. Up to now, 56nm patterns have been replicated in the exposure field of 10mm?1mm. And using scanning stages, 100 nm L & S patterns have been replicated in the field of 10mm?5 mm.
摘要:We have been developing debris-free laser plasma sources for EUV lithography since 1996. Two types of debris-free sources, such as cryogenic target and gas-puff target laser plasma sources, were designed and built up in CIOMP. EUV radiation spectra of the sources with a variety of targets have been obtained by different ways.
摘要:Thermal diffusion of Si atoms at the interface in Mo/Si multilayers was observed with an imaging type soft X ray emission microscope developed by us. It was possible to observe the diffusion with 0.2nm depth resolution in the direction normal to the interface by comparing the emission intensity for exactly the same position. The diffusion coefficient of Si atoms in Mo at 600℃ was roughly estimated to be 6.0×1017 cm2/s.
LI Feng-you,LU Zhen-wu,XIE Yong-jun,ZHANG Dian-wen
2001, 9(5): 451-454.
摘要:A new laser direct writing system is introduced and the potential application of the diffractive optical elements (DOE's) fabricated by applying laser direct writing system are presented. The fabrication techniques by applying the laser direct writing are developed. Experimental results have been obtained by applying laser direct writing machine with line width of 5μm and 10μm.
关键词:laser direct writing systems;diffractive optical elements(DOE);photolithography
摘要:Two beamlines and stations for soft X-ray lithography and hard X-ray lithography at NSRL are presented. Synchrotron radiation lithography (SRL) and mask techniques are developed, and the micro-electro-mechanical systems (MEMS) techniques are also investigated at NSRL. In this paper, some results based on SRL and MEMS techniques are reported, and sub-micron and high aspect ratio microstructures are given. Some micro-devices, such as microreactors are fabricated at NSRL.
摘要:To establish a theoretical basis for providing a better design method of multielement optical systems, we have developed a third-order geometric theory of a plane-symmetric multielement optical system that consists of a planar light source, an arbitrary number of ellipsoidal gratings, and an image plane. Analytic formulas of spot diagrams are derived for the system by analytically following a ray-tracing formalism. With these formulas, coma, spherical aberration, and resultant aberration are discussed. To make the theory practical, we determine the aberration coefficients numerically, rather than analytically, with the aid of ray tracing that takes into account the angular distribution of rays originating from a given light source. A merit function is defined so as to represent closely the variance of the spots formed when an infinite number of rays are traced and to take into account the dimensions of the source and the last optical element. The theory is also applicable to mirror-grating or mirror systems.
摘要:In this paper, the manufacturing and testing procedures to make large off-axis aspherical mirrors are presented. The difficulties in polishing and testing for both circular aperture and rectangular aperture mirrors are previewed, and a possible solution is given. The two mirrors have been polished by means of CCOS, and the final accuracy is 25nm rms for 770mm×210mm rectangular mirror and 20nm rms for φ600mm circular mirror. These results just meet the optical tolerances specified by the designer, and the manufacturing and testing procedures presented here show good ability to make the large off-axis aspherical mirrors.
摘要:Fabrication of the lightweight mirror is one of the key techniques for many large optical systems. CAD,CAM and CNC technologies are adopted in designing and manufacturing such mirrors in CIOMP. Better working efficiency and higher lightweight grade have been achieved. The results show that mirrors up to 70% weight reduction and 0.02λ(rms.) surface accuracy or better can be obtained.
摘要:Ultrasonic treatment technology is utilized to fabricate RBSiC, and a new polishing technology-float polishing is developed to process RBSiC. SEM, XRD, AFM. Raman scattering and WYCO are applied to measure and analyze the RBSiC and the polished surface. The results indicate that the ultrasonic treatment decreases the content of the free Si and makes RBSiC denser and more uniformity. The float polishing technology is suitable for polishing RBSiC effectively.
摘要:Reflective optics with wide field of view has been applied more and more widely in EUVL or space optics, and also plays an important role in promoting scientific and technological research. Among the reflective optics, the off-axis reflective optics is the most hopeful solution to the ever-highest demands of these applications. This paper gives the requirements of both the above mentioned applications and the similarities and differences between these two kinds of optical systems. Finally, a design example of off-axis reflective optics with wide field of view is presented and described.
摘要:DWDM technology is developing rapidly. Thin film narrow bandpass filter plays an important role in this field. This article presents some achievements in developing the DWDM narrow bandpass filters and also describes the results achieved by us.