摘要:We have been developing new fabrication tools based on optical radiation pressur e and related phenomena to develop aflexible and accurate microfabrication tec hnology. In this paper, the laser trapping probe for the nano-CMM for assessment, in addition to micromachining technique using a small particle controlled by optical radiation pressure and laser aggregation technique are discussed. As the positional detection probe for the nano-CMM, an optically trapped silica particle with 8 mm diameter in forced oscillation state is used. A probe sphere retains a stable position when applied with trapping force by Nd:YAG laser light formed an nu lar and is forced to oscillate by the driving force changed by modulating the in tensity of LD emission. Experintal results show that this vibrational microprobe h as the possibility to achieve positional sensing accuracy of less than 25 nm. As a new micromachining technique, nano-removal process using an optically trapped micro-grain is proposed. The laser trapping force enables not only to stably trap the diamond grain with asymmetrical shape but also to freely control the positi on with spinning. Using this micro machining tool, the machining experiments of h ydrocarbon film are performed. AFM observation confirmed that the fine groove wi th depths of about 3~4 nm can be fabricated. As an additive process based on ra diation pressure, a laser microstructure fabrication using laser agglomeration p h enomena of colloidal particles aided by radiation pressure is investigated. By c ontrolling laser beam scanning in slurry containing KOH solution and SiO2 par ticles with a diameter of 140 nm, colloidal particles are aggregated and adhered firmly to a silicon wafer substrate. Using this laser agglomerating process, two-dimensional grid microstructures at the pitch of 5 mm can be fabricated.
摘要:A new method to measure the conductivity of conducting thin films in a contactle s s fashion was demonstrated. A microwave compact equipment working at 94 GHz was used to measure the amplitude of the reflection coefficient of the microwave sig na l. Indium Tin Oxide films having conductivity of 8.20×104~8.02×105 S/m on the glass substrates were used as the samples. An evaluation equation was bui lt to determine the conductivity from the measured amplitude of the reflection c oefficient. The evaluated conductivity of conducting thin films agrees well with their actual value.